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electron cyclotron resonance in Chinese

Pronunciation:
How to pronounce "electron cyclotron resonance""electron cyclotron resonance" in a sentence

Translationmobile phoneMobile

  • 電子回旋共振
  • 電子回旋加速器諧振源

Examples

  • Nitridation of large silicon surfaces at low temperatures by electron cyclotron resonance plasma
    等離子體對(duì)硅表面的低溫大面積氮化
  • To overcome the bottle - neck , electron cyclotron resonance - plasma enhanced metalorganic chemical vapor deposition was developed
    為了解決這一問題，電子回旋共振ecr等離子體增強(qiáng)有機(jī)金屬氣相沉積( ecr - pemocvd )應(yīng)運(yùn)而生。
  • Microwave electron cyclotron resonance ( mwecr ) cvd is a newly developed technique for plasma processing and materials fabrication , such as plasma etching and films deposition
    本論文介紹了我們對(duì)ecr等離子體cvd系統(tǒng)的測(cè)試、 bn薄膜的制備和薄膜光學(xué)特性研究。
  • Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching ( ecr - rie ) equipment to improve its property of weave
    摘要采用微波電子回旋共振等離子體反應(yīng)離子刻蝕( ecr - rie )裝置對(duì)牦牛毛纖維進(jìn)行表面改性，從而改善牦牛毛的可紡性。
  • Sub - thesis is mainly on the test and research of the photoelectric properties of a - si : h thin film deposited by microwave electron cyclotron resonance chemical vapor deposition ( mw - ecr cvd ) system
    本論文主要是對(duì)mw - ecrcvd系統(tǒng)沉積的a - si : h薄膜進(jìn)行了一系列的光電特性的測(cè)試研究工作。
  • But the deposition rate and quality of a - si : h was primarily affected by preparation methods . recently , the microwave electron cyclotron resonance ( mwecr ) cvd method was weightily studied
    為了獲得高速沉積下的高品質(zhì)a - si : h薄膜，使其能夠產(chǎn)業(yè)化，微波電子回旋共振化學(xué)氣相沉積( mwecrcvd )方法在國際上受到了人們廣泛的重視。
  • In view of its virtue of high degree of electron and ion generations , the microwave electron cyclotron resonance ( mwecr ) cvd method is expected to deposit device quality a - si : h at high deposition rate
    鑒于微波電子回旋共振化學(xué)氣相沉積( mwecrcvd )系統(tǒng)具有電子和離子產(chǎn)生率高等優(yōu)點(diǎn)，人們期望它能在較高的沉積速率下獲得器件級(jí)質(zhì)量的a - si ： h薄膜。
  • The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films . in the paper , ch and si - hn of a - si : h films , fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method , have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting . the effects of ratio of h2 / sih4 on ch and si - hn are studied
    Fourier紅外透射( ftir )譜是研究氫化非晶硅( a - si : h )薄膜中氫含量( c _ h )及硅-氫鍵合模式( si - h _ n )最有效的手段，對(duì)于微波等離子體化學(xué)氣相沉積( mwecrcvd )方法在不同h _ 2 sih _ 4稀釋比下制備出的氫化非晶硅薄膜，我們通過紅外透射光譜的基線擬合、高斯擬合分析，得出了薄膜中的氫含量，硅氫鍵合方式及其組分，并分析了這些參數(shù)隨h _ 2 sih _ 4稀釋比變化的規(guī)律。
  • Therefore , the diagnostics of electrical and optical characteristic of plasma form the basic respects of plasma diagnostics . the author reports in detail in the dissertation the experimental investigation on the phenomena of some common discharge systems at typical operation status such as dc glow ; rf ( radio frequency ) glow and microwave ecr ( electron cyclotron resonance ) discharge
    創(chuàng)新之處： （ 1 ）提出了雙原子分子轉(zhuǎn)動(dòng)分辨發(fā)射光譜的擬合方法，并利用擬合方法進(jìn)行了氮?dú)庵绷鬏x光放電產(chǎn)生的第一負(fù)帶轉(zhuǎn)動(dòng)分辨光譜和磁控濺射沉積cnx膜過程中cn基團(tuán)的振動(dòng)帶的轉(zhuǎn)動(dòng)線型擬合，獲得了相應(yīng)的轉(zhuǎn)動(dòng)溫度。
  • In this thesis , we have mainly studied the characteristics of chf3 , c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ) . the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed . it was showed that h , f , c2 were the main radicals among radicals of h , f , c2 , ch and f2 in chf3 ecr plasma
    重點(diǎn)研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等離子體中基團(tuán)的分布；分析了不同基團(tuán)的相對(duì)密度隨宏觀放電條件(微波輸入功率、放電氣壓、源氣體流量比)的變化規(guī)律；探討了等離子體中各種基團(tuán)的生成途徑；在不同源氣體流量比的條件下沉積了a - c ： f薄膜并通過傅立葉變化紅外吸收光譜( ftir )的測(cè)量得到了薄膜中鍵結(jié)構(gòu)的信息；分析了a - c ： f薄膜的沉積速率及其鍵結(jié)構(gòu)與等離子體空間基團(tuán)分布狀態(tài)之間的關(guān)聯(lián)。

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